IPI072N10N3G View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
IPI072N10N3G Datasheet PDF : 10 Pages
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IPP072N10N3 G IPI072N10N3 G
OptiMOS®3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPI072N10N3 G
IPP072N10N3 G
100 V
7.2 mΩ
80 A
Package
Marking
PG-TO262-3
072N10N
PG-TO220-3
072N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
Unit
80
A
70
320
160
mJ
±20
V
150
W
-55 ... 175
°C
55/175/56
Rev. 2.1
page 1
2008-10-21
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