A1943 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

A1943

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-20

-18

IB = -1A

IB = -900mA

IB = -800mA

-16

IIBB==--650000mmAA IB = -700mA

-14

IB = -400mA

-12

IB = -300mA

-10

IB = -200mA

-8

IB = -100mA

-6

-4

-2

-0

-2

-4

-6

-8

-10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

10000

Ic=-10Ib

1000

Tj=-25oC

Tj=25oC

Tj=125oC

100

0.1

1

10

Ic[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

14

12

VCE = 5V

10

8

6

4

2

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

Tj = 125oC Tj = 25oC

100

Tj = -25oC

10

V = -5V

CE

1

1

10

I [A], COLLECTOR CURRENT

C

Figure 2. DC current Gain

10000

Ic=-10Ib

1000

Tj=25oC

Tj=125oC

100

Tj=-25oC

10

0.1

1

10

Ic[A], COLLECTOR CURRENT

Figure 4. Collector-Emitter Saturation Voltage

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1E-6

1E-5

1E-4

1E-3

0.01

0.1

1

Pulse duration [sec]

Figure 6. Thermal Resistance

© 2008 Fairchild Semiconductor Corporation

2SA1943/FJL4215 Rev. A2

3

www.fairchildsemi.com

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