STP6N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP6N60M2
STMicroelectronics
STP6N60M2 Datasheet PDF : 18 Pages
| |||
Electrical characteristics
2
Electrical characteristics
STF6N60M2, STP6N60M2, STU6N60M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 2.25 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
1.06 1.2 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
232
-
pF
-
14
-
pF
-
0.7
-
pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
71
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 4.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
-
8
- nC
-
1.7
- nC
-
4
- nC
1.
Cinocsrseaeqs.eiss
defined as a constant
from 0 to 80% VDSS
equivalent
capacitance
giving
the
same
charging
time
as
Coss
when
VDS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
9.5
-
ns
VDD = 300 V, ID = 1.65 A,
-
7.4
-
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 17 and Figure 22)
-
24
-
ns
-
22.5
-
ns
4/18
DocID024771 Rev 2
Share Link: