2SK2503TL View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SK2503TL

4V Drive Nch MOS FET

ROHM Semiconductor 

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Gate-source leakage

IGSS

−

Drain-source breakdown voltage V(BR)DSS 60

Zero gate voltage drain current

IDSS

−

Gate threshold voltage

VGS(th)

1.0

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

−

RDS(on)

−

Yfs ∗ 4.0

Ciss

−

Output capacitance

Coss

−

Reverse transfer capacitance

Turn-on delay time

Rise time

Crss

−

td(on)

−

tr

−

Turn-off delay time

td(off)

−

Fall time

∗ Pw ≤ 300µs, Duty cycle ≤ 1%

tf

−

Typ. Max. Unit

− ±100 nA

−

−

V

−

10 µA

−

2.5

V

0.11 0.135

Ω

0.17 0.20

−

−

S

520 −

pF

240 −

pF

100 −

pF

5.0

−

ns

20

−

ns

50

−

ns

20

−

ns

Test Conditions

VGS= ±20V, VDS=0V

ID=1mA, VGS=0V

VDS=60V, VGS=0V

VDS=10V, ID=1mA

ID=2.5A, VGS=10V

ID=2.5A, VGS=4V

ID=2.5A, VDS=10V

VDS=10V

VGS=0V

f=1MHz

ID=2.5A, VDD=30V

VGS=10V

RL=12Ω

RG=10Ω

2SK2503

Rev.A

2/5

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