2SK2503TL View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
2SK2503TL Datasheet PDF : 6 Pages
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Transistors
zElectrical characteristics curve
50
10
OpiserlaimtioitendinbtyhRis
area
DS(on)
5
1
100µs
P
1ms
DC
W=10ms
Operation
0.5
Tc=25°C
0.1 Single pulse
0.5 1 2
5 10 20
50 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximum Safe Operating Area
2SK2503
10
Ta=25°C
9
Pulsed
8
10V
8V
7
6V
5V
6
4V
5
4
3
2
VGS=3V
1
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.2 Typical Output Characteristics
10
VDS=10V
5 Pulsed
Ta=125°C
2
75°C
25°C
1
−25°C
0.5
0.2
0.1
0.05
0.02
0.01
012345678
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer Characteristics
4.0
VDS=10V
ID=1mA
3.0
2.0
1.0
0
−50 −25 0 25 25 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
10 VGS=10V
5 Pulsed
2
1
Ta=125°C
0.5
75°C
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
DRAIN CURRENT : ID (A)
5 10
Fig.5 Static Drain-Source On-State
Fig.5 Resistance vs. Drain Current ( Ι )
10
VGS=4V
5 Pulsed
2
1
Ta=125°C
75°C
0.5
25°C
−25°C
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10.0
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Fig.6 Resistance vs. Drain Current ( ΙΙ )
0.3
Ta=25°C
0.6
Pulsed
VGS=10V
Pulsed
0.5
0.2
0.4
ID=5A
0.3
2.5A
0.1
0.2
ID=5A
0.1
2.5A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static Drain-Source On-State Resistance Fig.8 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
vs. Channel Temperature
100
VDS=10V
50 Pulsed
20
10
Ta= −25°C
5
25°C
75°C
125°C
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2.0 5.0 10
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
Rev.A
3/5
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