2SK2503TL View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SK2503TL

4V Drive Nch MOS FET

ROHM Semiconductor 

Transistors

2SK2503

10

VGS=0V

5 Pulsed

Ta=125°C

2

75°C

25°C

−25°C

1

0.5

0.2

0.1

0.05

0

0.5

1.0

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.10 Reverse Drain Current

vs. Source-Drain Voltage ( Ι )

5

Ta=25°C

Pulsed

2

VGS=10V

0V

1

0.5

0.2

0.1

0.05

0.02

0.01

0

0.5

1.0

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.11 Reverse Drain Current

vs. Source-Drain Voltage ( ΙΙ )

10000

5000

2000

1000

500

200

100

50

Ta=25°C

f=1MHz

VGS=0V

Pulsed

Ciss

Coss

Crss

20

10

0.1 0.2 0.5 1 2

5 10 20 50 100

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.12 Typical Capacitance

vs. Drain-Source Voltage

1000

500

200

100

50

20

10

5

Ta=25°C

VDD=30V

VGS=10V

RG=10Ω

Pulsed

td(off)

tf

tr

td(on)

2

0.05 0.1 0.2 0.5 1 2

5 10

DRAIN CURRENT : ID (A)

Fig.13

Switching characteristics

(See Figures 16 and 17 for

the measurement circuit and

resultant waveforms)

1000 Ta=25°C

di/dt=50A/µs

500 VGS=0V

Pulsed

100

50

10

0.1 0.2

0.5 1

2

5 10

REVERSE DRAIN CURRENT : IDR (A)

Fig.14 Reverse Recovery Time

vs. Reverse Drain Current

10

D=1

1

0.5

0.2

0.1

0.1 0.05

0.02

0.01

0.01

Single pulse

0.001

10µ

100µ

1m

10m

Tc=25°C

θth(ch-c)(t)=r (t) θth (ch-c)

θth(ch-c)=6.25°C/W

PW

T

D=PTW

100m

1

10

PULSE WIDTH : PW (s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

Rev.A

4/5

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