2SK2963(TE12L,F) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK2963(TE12L,F) Datasheet PDF : 6 Pages
| |||
Marking
2SK2963
ZB
(The two digits represent the part number.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±10
μA
⎯
⎯
100
μA
100 ⎯
⎯
V
0.8
⎯
2.0
V
⎯ 0.65 0.95
Ω
⎯
0.5 0.7
0.6 1.2
⎯
S
⎯ 140 ⎯
pF
⎯
20
⎯
pF
⎯
45
⎯
pF
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
tr
10 V
VGS
ton
0V
ID = 0.5 A
⎯
8
⎯
VOUT
⎯
13
⎯
ns
tf
⎯
45
⎯
VDD ≈ 50 V
toff
Duty ≤ 1%, tw = 10 μs
⎯ 175 ⎯
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Qg
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
Qgs
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 1 A
⎯
6.3
⎯
nC
⎯
4.3
⎯
nC
⎯
2
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
⎯
⎯
⎯
⎯
IDR = 1 A, VGS = 0 V
⎯
IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯
IDR = 1 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯
⎯
1
A
⎯
3
A
⎯
−1.5
V
80
⎯
ns
140
⎯
μC
2
2008-03-06
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