33879 View Datasheet(PDF) - Freescale Semiconductor
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33879 Datasheet PDF : 24 Pages
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 3.1 V VDD 5.5 V, 5.5 V VPWR 18 V, -40 C TC 125 C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Slew Rate Low Side Configuration(11)
RLOAD = 620CL = 200pF
t SR(RISE)
V/s
0.1
0.5
1.0
Output Slew Rate Low Side Configuration(11)
RLOAD = 620 CL = 200 pF
t SR(FALL)
V/s
0.1
0.5
1.0
Output Rise Time High Side Configuration(11)
RLOAD = 620 CL = 200 pF
t SR(RISE)
V/s
0.1
0.3
1.0
Output Fall Time High Side Configuration(11)
RLOAD = 620 CL = 200 pF
t SR(FALL)
V/s
0.1
0.3
1.0
Output Turn ON Delay Time, High Side and Low Side Configuration(12)
t DLY(ON)
s
1.0
15
50
Output Turn OFF Delay Time, High Side and Low Side Configuration(12)
t DLY(OFF)
s
1.0
30
100
Output Fault Delay Time(13)
t FAULT
100
–
300
s
Power-ON Reset Delay
Delay Time Required from Rising Edge of EN and VDD to SPI Active
tPOR
100
–
s
–
Low-State Duration on VDD or EN for Reset
VDD or EN 0.2 V
t RESET
100
–
µs
–
Notes
11. Output slew rate respectively measured across a 620 resistive load at 10 to 90 percent and 90 to 10 percent voltage points.
CL capacitor is connected from Drain or Source output to Ground.
12. Output turn ON and OFF delay time measured from 50 percent rising edge of CS to the beginning of the 10 and 90 percent transition
points.
13. Duration of fault before fault bit is set. Duration between access times must be greater than 300 s to read faults.
33879
10
Analog Integrated Circuit Device Data
Freescale Semiconductor
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