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33879 View Datasheet(PDF) - Freescale Semiconductor

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Description
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33879 Datasheet PDF : 24 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 3.1 V VDD 5.5 V, 5.5 V VPWR 18 V, -40 C TC 125 C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 C.
Characteristic
Symbol
Min
Typ
Max
Unit
DIGITAL INTERFACE
Input Logic High-voltage Thresholds(9)
Input Logic Low-voltage Thresholds(9)
IN5, IN6, EN Input Logic Current
IN5, IN6, EN = 0 V
VIH
0.7 VDD
VDD + 0.3
V
VIL
GND - 0.3
0.2 VDD
V
I IN5, I IN6, I EN
A
-10
10
IN5, IN6 Pull-down Current
0.8 to 5.0 V
I IN5, I IN6,
30
A
45
100
EN Pull-down Current
EN = 5.0 V
I EN
33879
33879A
A
20
45
100
20
45
110
SCLK, DI Input, Tri-state DO Output
0 to 5.0 V
I SCK, I DI, I TRI-
A
DO
-10
10
CS Input Current
CS = VDD
ICS
A
-10
10
CS Pull-up Current
CS = 0 V
ICS
A
-30
-100
CS Leakage Current to VDD
CS = 5.0 V, VDD = 0 V
ICS(LKG)
A
10
DO High State Output Voltage
IDO-HIGH = -1.6 mA
VDOHIGH
V
VDD - 0.4
VDD
DO Low State Output Voltage
IDO-LOW = 1.6 mA
VDOLOW
Input Capacitance on SCLK, DI, Tri-state DO, IN5, IN6, EN(10)
CIN
Notes
9. Upper and lower logic threshold voltage levels apply to DI, CS, SCLK, IN5, IN6, and EN.
10. This parameter is guaranteed by design; however, it is not production tested.
V
0.4
20
pF
Analog Integrated Circuit Device Data
Freescale Semiconductor
33879
9

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