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74HC85DB,112 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
74HC85DB,112
NXP
NXP Semiconductors. NXP
74HC85DB,112 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Nexperia
74HC85; 74HCT85
4-bit magnitude comparator
Symbol Parameter Conditions
74HCT85
tpd
propagation An, Bn to QA>B;
delay
An, Bn to QA<B; see Figure 7
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
An, Bn to QA=B; see Figure 7
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
IA=B or IA>B to QA<B;
IA<B or IA=B to QA>B;
see Figure 7
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
IA=B to QA=B; see Figure 7
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
tt
transition time VCC = 4.5 V; see Figure 7
CPD
power
per package;
dissipation
VI = GND to VCC - 1.5 V
capacitance
25 °C
Min Typ Max
[1]
-
26 44
-
22
-
-
24 40
-
20
-
-
18 31
-
15
-
-
-
[2] -
[3] -
18 31
15
-
7
15
20
-
-40 °C to
+85 °C
Min Max
-
55
-
-
-
50
-
-
-
39
-
-
-
39
-
-
-
19
-
-
-40 °C to Unit
+125 °C
Min Max
-
66 ns
-
- ns
-
60 ns
-
- ns
-
47 ns
-
- ns
-
47 ns
-
- ns
-
22 ns
-
- pF
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi + Σ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
Σ (CL × VCC2 × fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in V.
74HC_HCT85
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 20 April 2018
© Nexperia B.V. 2018. All rights reserved.
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