EMD6 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
EMD6 Datasheet PDF : 2 Pages
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Transistors
EMD6 / UMD6N / IMD6A
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 5 − − V IE=50µA
Collector cutoff current
ICBO
−
− 0.5 µA VCB=50V
Emitter cutoff current
IEBO
−
− 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE (sat) − − 0.3 V IC/IB=5mA/0.25mA
DC current transfer ratio
Transition frequency
hFE 100 250 600 − VCE=5V, IC=1mA
fT
− 250 − MHz VCE=10mA, IE=−5mA, f=100MHz ∗
Input resistance
R1 3.29 4.7 6.11 kΩ
−
∗ Transition frequency of the transistor
!Packaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMD6
UMD6N
IMD6A
T2R
8000
Taping
TR
T148
3000
3000
!Electrical characteristic curves
DTr1 (NPN)
1k
500
VCE=5V
200
100
Ta=100˚C
25˚C
50
−40˚C
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
DTr2 (PNP)
1k
VCE=−5V
500
200
100
Ta=100˚C
25˚C
50
−40˚C
20
10
5
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
1
500m
lC/lB=20
200m
100m
50m
Ta=100˚C
25˚C
−40˚C
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
−1
−500m
−200m
−100m
−50m
Ta=100˚C
25˚C
−40˚C
lC/lB=20
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation
voltage vs. collector current
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