BTA316-600E View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BTA316-600E Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA316 series D and E
16 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 8
current
T2+ G+
T2+ G−
T2− G−
IL
latching current VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
T2+ G−
T2− G−
IH
holding current VD = 12 V; IGT = 0.1 A; see Figure 11
VT
on-state
voltage
IT = 18 A; see Figure 9
VGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 7
voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C
ID
off-state current VD = VDRM(max); Tj = 125 °C
BTA316-600D
BTA316-600E Unit
BTA316-800E
Min Typ Max Min Typ Max
-
-
5
-
-
10 mA
-
-
5
-
-
10 mA
-
-
5
-
-
10 mA
-
-
15 -
-
25 mA
-
-
25 -
-
30 mA
-
-
25 -
-
30 mA
-
-
15 -
-
15 mA
-
1.3 1.5 -
1.3 1.5 V
-
0.7 1.5 -
0.8 1.5 V
0.25 0.4 -
0.25 0.4 -
V
-
0.1 0.5 -
0.1 0.5 mA
BTA316_SER_D_E_1
Product data sheet
Rev. 01 — 18 April 2007
© NXP B.V. 2007. All rights reserved.
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