TC426 View Datasheet(PDF) - TelCom Semiconductor Inc => Microchip

Part Name

Description

Manufacturer

TC426

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TelCom Semiconductor Inc => Microchip 

TC426

TC427

TC428

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, Any Terminal .... VDD + 0.3V to GND – 0.3V

Power Dissipation (TA ≤ 70°C)

Plastic ...............................................................730mW

CerDIP ..............................................................800mW

SOIC .................................................................470mW

Derating Factor

Plastic ............................................................. 8mW/°C

CerDIP ......................................................... 6.4mW/°C

SOIC ............................................................... 4mW/°C

Operating Temperature Range

C Version ................................................. 0°C to +70°C

I Version .............................................. – 25°C to +85°C

E Version ............................................ – 40°C to +85°C

M Version .......................................... – 55°C to +125°C

Maximum Chip Temperature ................................. +150°C

Storage Temperature Range ................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1, High Input Voltage

VIL

Logic 0, Low Input Voltage

IIN

Input Current

Output

VOH

High Output Voltage

VOL

Low Output Voltage

ROH

High Output Resistance

ROL

Low Output Resistance

IPK

Peak Output Current

Switching Time (Note 1)

tR

Rise Time

tF

Fall Time

tD1

Delay Time

tD2

Delay Time

Power Supply

IS

Power Supply Current

0V ≤ VIN ≤ VDD

IOUT = 10 mA, VDD = 18V

IOUT = 10 mA, VDD = 18V

Test Figure 1/2

Test Figure 1/2

Test Figure 1/2

Test Figure 1/2

VIN = 3V (Both Inputs)

VIN = 0V (Both Inputs)

2.4

—

—

—

–1

—

VDD – 0.025

—

—

—

—

10

—

6

—

1.5

—

—

—

—

—

—

—

—

—

—

—

—

—

0.8

1

—

0.025

15

10

—

30

30

50

75

8

0.4

V

V

µA

V

V

Ω

Ω

A

nsec

nsec

nsec

nsec

mA

mA

ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

Input

VIH

VIL

IIN

Output

Logic 1, High Input Voltage

Logic 0, Low Input Voltage

Input Current

0V ≤ VIN ≤ VDD

2.4

—

—

V

—

—

0.8

V

–10

—

10

µA

VOH

High Output Voltage

VDD – 0.025

—

—

V

VOL

Low Output Voltage

—

—

0.025

V

ROH

High Output Resistance

IOUT = 10 mA, VDD = 18V

—

13

20

Ω

ROL

Low Output Resistance

IOUT = 10 mA, VDD = 18V

—

8

15

Ω

Switching Time (Note 1)

tR

tF

tD1

tD2

Power Supply

Rise Time

Fall Time

Delay Time

Delay Time

Test Figure 1/2

Test Figure 1/2

Test Figure 1/2

Test Figure 1/2

—

—

60

nsec

—

—

30

nsec

—

—

75

nsec

—

—

120

nsec

IS

Power Supply Current

NOTE: 1. Switching times guaranteed by design.

VIN = 3V (Both Inputs)

VIN = 0V (Both Inputs)

—

—

12

mA

—

—

0.6

mA

4-170

TELCOM SEMICONDUCTOR, INC.

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