BCW68HTA View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

BCW68HTA

45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

BCW68H

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

(base open) (Note 8)

Emitter-Base Breakdown Voltage

Collector-emitter cut-off current

Emitter-base Cut-off Current

ON CHARACTERISTICS (Note 8)

Static Forward Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS (Note 8)

Symbol

BVCES

BVCEO

BVEBO

ICES

IEBO

hFE

VCE(sat)

VBE(sat)

Min

Typ

-60

—

-45

—

-7

—

—

<1

—

—

—

<1

250

350

100

—

—

—

—

-700

—

—

Transition Frequency

Output Capacitance

Input Capacitance

fT

Cobo

Cibo

100

—

—

12

—

—

Noise Figure

N

—

2

Turn-On Time

Turn-Off Time

ton

—

—

toff

—

—

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

-20

-10

-20

630

—

-300

—

-2

—

18

80

10

100

400

Unit

Test Condition

V IC = -10µA

V ICEO = -10mA

V IEBO = -10µA

nA VCES = -45V

µA VCES = -45V, TA = +150°C

nA VEBO = -5.6V

— IC = -100mA, VCE = -1V

IC = -500mA, VCE = -2V

mV IC = -100mA, IB = -10mA

IC = -500mA, IB = -50mA

V IC = -500mA, IB = -50mA

MHz

pF

pF

dB

ns

ns

IC = -20mA, VCE = -10V,

f = 100MHz

VCB = -10V, f = 1MHz

VCB = -0.5V, f = 1MHz

IC = -0.2mA. VCE = -5V,

RG = 1KΩ, f = 1KHz,

Δf = 200Hz

IC = -150mA.

IB1 = -IB2 = -15mA

RL = 150Ω

BCW68H

Document number: DS33004 Rev. 6 - 2

3 of 5

www.diodes.com

December 2012

© Diodes Incorporated

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