BF998WR,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BF998WR,115 Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
FEATURES
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT343R package with source and
substrate interconnected. The transistor is protected
against excessive input voltage surges by integrated
back-to-back diodes between gates and source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
3
4
d
g2
g1
21
s,b
Top view
MAM198
Marking code: MB.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
TYP.
24
2.1
25
1
MAX.
12
30
300
150
UNIT
V
mA
mW
C
mS
pF
fF
dB
1997 Sep 05
2
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