SBYV27-100(2003) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SBYV27-100 Datasheet PDF : 2 Pages
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SBYV27-50 THRU SBYV27-200
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curves
3.0
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
2.5
TL Lead Temperature
2.0
1.5
1.0
TA, Ambient Temperature
0.5 P.C.B. Mounted
0.5" x 0.5" (12 x 12mm)
Copper Pads
0
0
25
50
75 100 125 150 175
Temperature (°C)
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
TJ = 100°C
10
1
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 5 – Reverse Switching
Characteristics
60
IF = 2.0A
50 VR=30V
di/dt=150A/µs
di/dt=100A/µs
40
di/dt=20A/µs
di/dt=50A/µs
30
di/dt=100A/µs
di/dt=150A/µs
di/dt=50A/µs
20
di/dt=20A/µs
10
trr
Qrr
0
0
25
50 75 100 125 150 175
Junction Temperature (°C)
www.vishay.com
2
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
60
10ms Single Half Sine-Wave
TJ = 175°C
50
40
30
20
10
0
1
1000
10
100
Number of Cycles at 50 HZ
Fig. 4 – Typical Reverse Leakage
Characteristics
100
TJ = 100°C
10
1
TJ = 25°C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Junction Capacitance
100
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Document Number 88736
14-May-03
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