SBYV27-200-E3/54(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SBYV27-200-E3/54 Datasheet PDF : 4 Pages
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SBYV27-50 thru SBYV27-200
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
60
IF = 2.0 A
VR = 30 V
50
40
30
20
dI/dt = 150 A/µs
dI/dt = 100 A/µs
dI/dt = 20 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
10
0
0
trr
Qrr
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Charateristics
100
TJ = 175 °C
TJ = 165 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
0.140 (3.6)
0.104 (2.6)
DIA.
Document Number: 88736 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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