FDG6322C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDG6322C Datasheet PDF : 9 Pages
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DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
IDSS
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate - Body Leakage Current
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient
RDS(ON)
Static Drain-Source On-Resistance
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS = 20 V, VGS= 0 V,
TJ = 55°C
VDS =-20 V, VGS = 0 V,
TJ = 55°C
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C
VGS = 4.5 V, ID = 0.22 A
TJ =125°C
VGS = 2.7 V, ID = 0.19 A
VGS = -4.5 V, ID = -0.41 A
TJ =125°C
VGS = -2.7 V, ID = -0.25 A
VGS = 4.5 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V
VDS = 5 V, ID= 0.22 A
VDS = -5 V, ID = -0.5 A
N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
P-Channel
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Type Min Typ
N-Ch 25
P-Ch -25
N-Ch
25
P-Ch
-22
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
-0.65
0.22
-0.41
0.85
-0.82
-2.1
2.1
2.6
5.3
3.7
0.85
1.2
1.15
0.2
0.9
N-Ch
9.5
P-Ch
62
N-Ch
6
P-Ch
34
N-Ch
1.3
P-Ch
10
Max Units
V
mV/oC
1
µA
10
-1
µA
-10
100 nA
-100 nA
1.5
V
-1.5
mV/ oC
4
Ω
7
5
1.1
1.9
1.5
A
S
pF
FDG6322C Rev.F1
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