FDG6322C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDG6322C Datasheet PDF : 9 Pages
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1Typical Electrical Characteristics: P-Channel (continued)
5
I D = -0.41A
4
3
VDS= -5V
-10V
-15V
2
1
0
0
0.4
0.8
1.2
1.6
Qg , GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
200
80
Ciss
30
Coss
10
f = 1 MHz
5 VGS = 0 V
Crss
3
0.1
0.3
1
2
5
10
25
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
3
1
0.5
RDS(ON) LIMIT
0.1
0.05
VGS = -4.5V
SINGLE PULSE
10m1sms
100ms
1s
DC10s
RθJA = 415°C
TAA = 25°C
0.01
0.1 0.2
0.5 1
2
5
10
25 40
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R θJA=415°C/W
TA= 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
200
SINGLE PULSE TIME (SEC)
Figure 20. Single Pulse Maximum Power
Dissipation.
FDG6322C Rev.F1
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