SSD2011A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

SSD2011A

Dual P-CHANNEL POWER MOSFET

Fairchild Semiconductor 

Dual P-CHANNEL POWER MOSFET

FEATURES

! Lower RDS(ON)

! Improved Inductive Ruggedness

! Fast Switching Times

! Low Input Capacitance

! Extended Safe Operating Area

! Improved High Temperature Reliability

Product Summary

Part Number BVDSS RDS(on)

SSD2011A - 60V 0.280Ω

ID

- 2.0A

SSD2011A

8 SOIC

S1 1

G1 2

S2 3

G2 4

Top View

D1 D2

8 D1

7 D1

6 D2

5 D2

G1, G2

S1, S2

P-Channel MOSFET

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

PD

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TA=25℃

Continuous Drain Current TA=70℃

Drain Current-Pulsed (2)

Gate-to-Source Voltage

Total Power Dissipation ( TA=25℃ )

( TA=70℃ )

Operating and Junction Storage

Temperature Range

Value

- 60

- 2.0

- 1.6

- 10.0

±20

2.0

1.3

- 55 to +150

Units

V

A

A

V

W

℃

Thermal Resistance

Symbol

RθJA

Characteristic

Junction-to-Ambient

Typ.

--

Max.

62.5

Units

℃/W

Rev. A

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