NTMS10P02R2(2003) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NTMS10P02R2
(Rev.:2003)

Power MOSFET -10 Amps, -20 Volts

ON Semiconductor 

NTMS10P02R2

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

2.0

VGS = 0 V

TJ = 25°C

1.6

100

100 ms

10

1.0 ms

1.2

VGS = 2.5 V

10 ms

SINGLE PULSE

0.8

1.0 TC = 25°C

0.4

0

0.50

0.55

0.60

0.65

0.70

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 11. Diode Forward Voltage versus Current

0.1

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

dc

1.0

10

100

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 13. Diode Reverse Recovery Waveform

TYPICAL ELECTRICAL CHARACTERISTICS

10

1.0

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

SINGLE PULSE

0.001

1.0E−05 1.0E−04

1.0E−03

Normalized to θja at 10s.

Chip 0.0163 Ω 0.0652 Ω 0.1988 Ω 0.6411 Ω 0.9502 Ω

0.0307 F 0.1668 F 0.5541 F 1.9437 F 72.416 F Ambient

1.0E−02

1.0E−01

t, TIME (s)

1.0E+00

1.0E+01 1.0E+02 1.0E+03

Figure 14. Thermal Response

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