FQD2N80TF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD2N80TF Datasheet PDF : 9 Pages
| |||
April 2013
FQD2N80 / FQU2N80
N-Channel QFET® MOSFET
800 V, 1.8 A, 6.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
D
G
S
D-PAK
G
D
S
Features
• 1.8 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V,
ID = 0.9 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
I-PAK
D
!
"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD2N80 / FQU2N80
800
1.8
1.14
7.2
± 30
180
1.8
5.0
4.0
2.5
50
0.4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
FQD2N80 / FQU2N80
2.5
50
110
Unit
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Coporation
FQD2N80 / FQU2N80 Rev. C0
www.fairchildsemi.com
Share Link: 