FQD2N80TF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD2N80TF Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
VGS = 10V
8
VGS = 20V
6
4
※ Note : TJ = 25℃
2
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Coporation
FQD2N80 / FQU2N80 Rev. C0
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10
VDS = 400V
VDS = 640V
8
6
4
2
※ Note : ID = 2.4A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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