EL2227CS-T7 View Datasheet(PDF) - Elantec -> Intersil

Part Name

Description

Manufacturer

EL2227CS-T7

Dual very low noise amplifier

Elantec -> Intersil 

EL2227C

Dual Very Low Noise Amplifier

bandwidth product divided by the noise gain of the cir-

cuit. For gains less than 2, higher-order poles in the

amplifiers' transfer function contribute to even higher

closed loop bandwidths. For example, the EL2227C

have a -3dB bandwidth of 115MHz at a gain of +2, drop-

ping to 28MHz at a gain of +5. It is important to note

that the EL2227C have been designed so that this

“extra” bandwidth in low-gain applications does not

come at the expense of stability. As seen in the typical

performance curves, the EL2227C in a gain of +2 only

exhibit 0.5dB of peaking with a 1000Ω load.

Output Drive Capability

The EL2227C have been designed to drive low imped-

ance loads. They can easily drive 6VPP into a 500Ω load.

This high output drive capability makes the EL2227C an

ideal choice for RF, IF and video applications.

Printed-Circuit Layout

The EL2227C are well behaved, and easy to apply in

most applications. However, a few simple techniques

will help assure rapid, high quality results. As with any

high-frequency device, good PCB layout is necessary

for optimum performance. Ground-plane construction is

highly recommended, as is good power supply bypass-

ing. A 0.1µF ceramic capacitor is recommended for

bypassing both supplies. Lead lengths should be as short

as possible, and bypass capacitors should be as close to

the device pins as possible. For good AC performance,

parasitic capacitances should be kept to a minimum at

both inputs and at the output. Resistor values should be

kept under 5kΩ because of the RC time constants associ-

ated with the parasitic capacitance. Metal-film and

carbon resistors are both acceptable, use of wire-wound

resistors is not recommended because of their parasitic

inductance. Similarly, capacitors should be low-induc-

tance for best performance.

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