1N60P View Datasheet(PDF) - Formosa Technology
Part Name
Description
Manufacturer
1N60P Datasheet PDF : 2 Pages
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FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
tp≦1 s
Forward continuous current
Ta=25℃
Storage temperature range
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
Value
Unit
VRRM
40
V
VRRM
45
V
IFSM
150
mA
IFSM
500
mA
IF
30
mA
IF
50
mA
Tstg
-65~+125
℃
Maximum Thermal Resistance
Tj=25℃
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mm×50mm×1.6mm
RthJA
250
K/W
www.formosams.com
Formosa MicroSemi CO., LTD.
Rev. 2, 22-Nov-2002
1/2
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