2N2484(2012) View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N2484 Datasheet PDF : 3 Pages
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NPN 2N2484
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
ICBO
IEBO
VCEO (*)
VCBO
VEBO
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown
Voltage
Collector Base Breakdown
Voltage
Emitter Base Breakdown
Voltage
hFE (*)
DC Current Gain
VCE(SAT)
VBE
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
fT
Transition frequency
hfe
CCBO
CEBO
Small signal current gain
Collector-Base Capacitance
Emitter-Base Capacitance
NF
Noise figure
(*) Pulse conditions : tp < 300 µs, δ =1%
Test Condition(s) Min Typ Max Unit
VCB=45 V, IE=0
VCB=45 V, IE=0
Tj=150°C
VBE=5.0 V, IC=0
IC=10 mA, IB=0
-
- 10 nA
-
- 10 µA
-
- 10 nA
60 -
-
V
IC=10 µA, IE=0
60 -
-
V
IE=10 µA, IC=0
IC=1 µA, VCE =5 V
IC=10 µA, VCE =5 V
IC=100 µA, VCE =5 V
IC=500 µA, VCE =5 V
IC=1mA, VCE =5 V
IC=10 mA, VCE =5 V
IC=10 µA, VCE =5 V
Tamb = -55°
IC=1 mA, IB=0.1 mA
IC=100 µA, VCE =5 V
IC=50 µA, VCE= 5 V
f= 5 MHz
IC=500 µA, VCE= 5 V
f= 30 MHz
IC=1 mA, VCE=5.0 V
f= 1 KHz
IE= 0 ,VCB=5 V
f = 1MHz
IC= 0 ,VEB=0.5 V
f = 1MHz
f = 100 Hz
IC= 0
VCE=5.0 V
Rg = 10 kΩ
f = 1 kHz
f = 10 kHz
f = 10 to
10000 Hz
6
-
-
V
30 200 -
100 290 500
175 375 -
200 430 -
250 450 -
-
- 430 800
20 -
-
-
0.2 0.35 V
0.5 0.57 0.7
15 20
60 78
-
MHz
-
150 400 900 -
- 3.5 6 pF
- 3.5 6 pF
-
4 10
- 1.8 3
- 0.6 2 dB
- 1.8 3
15/10/2012
COMSET SEMICONDUCTORS
2/3
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