2N3019 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N3019 Datasheet PDF : 4 Pages
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NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector Cutoff Current
VCB =950 V
IE =0
2N3019
2N3020
-
VCB =90 V, IE =0
Tj =150°C
2N3019
2N3020
-
- 10 nA
- 10 µA
IEBO
Emitter Cutoff Current
VEB =5 V
IC =0
2N3019
2N3020
-
- 10 nA
VCEO
Collector Emitter Breakdown IC =10 mA
Voltage
IB =0
2N3019
2N3020
80
-
-
V
VCBO
Collector Base Breakdown IC =100 µA
Voltage
IE =0
2N3019
2N3020
140
-
-
V
VEBO
Emitter Base Breakdown
Voltage
IE =100 µA
IC =0
2N3019
2N3020
7
-
-
V
IC =0.1 mA
2N3019 50 -
-
VCE =10 V
2N3020 30 - 100
IC =10 mA
2N3019 90 -
-
VCE =10 V
2N3020 40 - 120
IC =150 mA
2N3019 100 - 300
VCE =10 V
2N3020 40 - 120
hFE
DC Current Gain (*)
IC =500 mA
2N3019 50 -
-
-
VCE =10 V
2N3020 30 - 100
IC =1 A
VCE =10 V
2N3019
2N3020
15
-
-
IC =150 mA
VCE =10 V
2N3019 40 -
-
Tamb = -55°C
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC =150 mA
IB =15 mA
IC =500 mA
IB =50 mA
2N3019
2N3020
-
2N3019
2N3020
-
- 0.2
- 0.5 V
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC =150 mA
IB =15 mA
2N3019 -
- 1.1
16/10/2012
COMSET SEMICONDUCTORS
2/4
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