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Part Name
Description
2N3019 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
2N3019
SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductors
2N3019 Datasheet PDF : 4 Pages
1
2
3
4
NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
f
T
h
fe
NF
C
CBO
C
EBO
r
bb’
C
b’c
Transition frequency
Small Signal Current Gain
Noise Figure
Collector-Base capacitance
Emitter-Base capacitance
Feedback Time Constant
I
C
=50 mA
V
CE
=10 V
f = 20 MHz
I
C
=1 mA
V
CE
=5 V
f = 1 kHz
I
C
=-100 µA
V
CE
=10 V
f = 1 kHz
R
g
= 1k
Ω
I
E
= 0
V
CB
=10 V
f = 1 MHz
I
C
= 0
V
EB
=0.5 V
f = 1 MHz
I
C
=10 mA
V
CE
=10 V
f = 4 MHz
2N3019 100 -
2N3020 80 -
-
MHz
-
2N3019 80
2N3020 30
- 400
-
- 200
2N3019 -
-
4 dB
2N3019
-
2N3020
2N3019
-
2N3020
2N3019
-
2N3020
- 12 pF
- 60 pF
- 400 ps
(*) Pulse conditions : tp < 300
µ
s,
δ
=2%
16/10/2012
COMSET SEMICONDUCTORS
3/4
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