2N3055 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

2N3055

Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package

NTE Electronics 

2N3055

Silicon NPN Power Transistor

Audio Power Amp, Medium Speed Switch

TO−3 Type Package

Description:

The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching

and amplifier applications.

Features:

D DC Current Gain: hFE = 20 − 70 @ IC = 4A

D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A

D Excellent Safe Operating Area

Absolute Maximum Ratings:

Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V

Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W

Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C

Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W

Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum ratings

applied to the device are individual stress limit values (not normal operating conditions) and

are not valid simultaneously. If these limits are exceeded, device functional operation is not

implied, damage may occur and reliability may be affected.

Electrical Characteristics: (TC =+25C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2

60

Collector−Emitter Sustaining Voltage VCER(sus) IC = 200mA, RBE = 100, Note 2

70

Collector Cutoff Current

ICEO VCE = 30V, IB = 0

−

ICEX VCE = 100V, VBE(off) = 1.5V

−

VCE = 100V, VBE(off) = 1.5V, TC = +150C −

Emitter Cutoff Current

IEBO VBE = 7V, IC = 0

−

−−V

−−V

− 0.7 mA

− 1.0 mA

− 5.0 mA

− 5.0 mA

Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%.

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