2N6296 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N6296 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6296 2N6297
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Complement to type 2N6294/6295
APPLICATIONS
·For high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
体 Absolute maximum ratings(Ta=25℃)
固I电NC半H导ANGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6296
2N6297
VCEO
2N6296
Collector-emitter voltage
2N6298
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-80
-60
-80
-5
UNIT
V
V
V
IC
Collector current
-4
A
ICM
Collector current-Peak
-8
A
IB
Base current
-80
mA
PT
Total power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
3.5
UNIT
℃/W
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