2N6296 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N6296

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N6296 2N6297

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N6296

-60

V(BR)CEO

Collector-emitter

breakdown voltage

IC=-50mA ; IB=0

V

2N6297

-80

VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-8mA

-2.0

V

VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA

-3.0

V

VBEsat Base-emitter saturation voltage

IC=-4A ;IB=-40mA

-4.0

V

VBE

Base -emitter on voltage

IC=-2A ; VCE=-3V

-2.8

V

ICEX

Collector cut-off current

VCE=RatedVCE;VBE(off)=1.5V

TC=150℃

-0.5

-5.0

mA

体 ICEO

Collector cut-off current

固I电NC半H导ANGE SEMICONDUCTOR IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

VCE=1/2Rated VCEO; IB=0

VEB=-5V; IC=0

IC=-2A ; VCE=-3V

750

IC=-4A ; VCE=-3V

100

-0.5

mA

-2.0

mA

18000

fT

Transition frequency

IC=-1.5A ; VCE=-3V;f=1.0MHz

4.0

MHz

COB

Output capacitance

IE=0 ; VCB=-10V;f=0.1MHz

200

pF

2

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