2N7002 View Datasheet(PDF) - Silicon Standard Corp.
Part Name
Description
Manufacturer
2N7002 Datasheet PDF : 3 Pages
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2N7002
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Test conditions
V(BR)DSS
Vth(GS)
lGSS
IDSS
ID(ON)
rDS(0n)
gfs
VDS(on)
VSD
Ciss
COSS
CrSS
VGS=0 V, ID=10 μA
VDS=VGS, ID=250 μA
VDS=0 V, VGS=±25 V
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7 V
VGS=10 V, ID=500mA
VGS=5 V, ID=50mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0 V
VDS=25V, VGS=0V, f=1MHz
MIN
TYP
MAX UNIT
60
V
1
2.5
±80
nA
80
nA
500
mA
1
7.5
Ω
1
7.5
80
500
ms
0.5
3.75
V
0.05
0.375
V
0.55
1.2
V
50
25
pF
5
SWITCHING TIME
Turn-on Time
Turn-off Time
td(on)
td(off)
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
20
ns
40
08/04/2007 Rev.1.00
www.SiliconStandard.com
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