2SA1200 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SA1200

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −150 V, IE = 0

IEBO

VEB = −5 V, IC = 0

hFE

VCE = −5 V, IC = −10 mA

(Note 2)

VCE (sat)

VBE

fT

Cob

IC = −10 mA, IB = −1 mA

VCE = −5 V, IC = −30 mA

VCE = −30 V, IC = −10 mA

VCB = −10 V, IE = 0, f = 1 MHz

Note 2: hFE classification O: 70 to 140, Y: 120 to 240

Marking

Part No. (or abbreviation code)

B

Lot No.

Characteristics indicator

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2SA1200

Min Typ. Max Unit

―

― −0.1 µA

―

― −0.1 µA

70

― 240

―

― −0.8

V

―

― −0.9

V

― 120 ― MHz

―

4.0 5.0

pF

2

2004-07-07

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