2SA1415 View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
2SA1415 Datasheet PDF : 4 Pages
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Ordering number:EN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching,
Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage (VCEO=160V).
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
· Very small size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038
[2SA1415/2SC3645]
( ) : 2SA1415
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC1
PC2
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)50mA, IB=(–)5mA
Turn-ON Time
ton
See sepcified Test Circuit.
Storage Time
tstg
See sepcified Test Circuit.
Fall Time
tf
See sepcified Test Circuit.
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
100 R 200 140 S 280 200 T 400
Marking 2SA1415 : AA
2SC3645 : CA
hFE rank : R, S, T
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Ratings
Unit
(–)180 V
(–)160 V
(–)5 V
(–)140 mA
(–)200 mA
500 mW
1.3 W
150 ˚C
–55 to +150 ˚C
Ratings
min
typ
100*
150
(4.0)
3.0
(–0.14)
0.07
0.1
1.5
0.1
max
(–)100
(–)100
400*
(–0.4)
0.3
Unit
nA
nA
MHz
pF
pF
V
V
µs
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/2145MW, TS No.1720-1/4
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