2SC3250 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC3250 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage
IC=50mA ;IB=5mA
VBE
Base-emitter on voltage
IC=30mA ; VCE=10V
hFE-1
DC current gain
IC=5mA ; VCE=50V
hFE-2
DC current gain
IC=30mA ; VCE=10V
COB
Collector output capacitance
IE=0; VCB=30V,f=1MHz
fT
Transition frequency
IE=-20mA ; VCB=30V
Product Specification
2SC3250
MIN TYP. MAX UNIT
300
V
300
V
7
V
1.5
V
1.2
V
50
250
30
5.0
pF
70 100
MHz
2
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