2SC5763 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC5763 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SC5763
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
hFE-3
DC Current Gain
IC= 1mA; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.8A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= 1A; IB2= -2A;
RL= 40Ω; VCC= 200V
hFE-1 Classifications
M
N
20-40
30-50
MIN TYP. MAX UNIT
400
V
700
V
8
V
0.8
V
1.5
V
10
μA
10
μA
20
50
10
10
80
pF
17
MHz
0.5 μs
2.5 μs
0.25 μs
isc Website：www.iscsemi.cn
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