2SC5765L(2016) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SC5765L Datasheet PDF : 4 Pages
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2SC5765
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
100
Safe Operating Area
when a device is mounted
on a Glass epoxy board
(35mm*30mm*1mm)
10 Ic max(Pulsed)
1ms*
Ic max
(Continous)
1
DC
t=100ms*
Operation
0.1 *Single nonrepetitive pulse
TA= 25°C
Curves must be derated linearly
with increase in temperature
0.01
0.01 0.1
1
VCEO max
10
100
Collector Emitter Voltage, VCE (V)
Collector Power Dissipation vs.
600
Ambient Temperature
400
200
0
0
50
100
150
Ambient Temperature, TA (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R216-002.D
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