2SC5765G View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SC5765G Datasheet PDF : 4 Pages
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2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
DC
PLUSED
IC
5
A
9
A
Collector Power Dissipation (Note 2)
PC
550
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage (Note)
Collector Output Capacitance
Note: Pulse test
SYMBOL
BVCEO
ICBO
IEBO
hFE 1
hFE2
hFE3
VCE(SAT)
Cob
TEST CONDITIONS
IC =1mA, IB= 0
VCB=15V, IE= 0
VEB= 5V, Ic=0
VCE=1.5V, Ic=0.5A
VCE=1.5V, Ic=2A
VCE=1.5V, Ic=5A
Ic=3A, IB=60mA
VCB=10V, IE= 0, f=1MHz
MIN TYP MAX UNIT
10
V
0.1 μA
0.1 μA
450
700
320
170
0.27 V
25
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R216-002.C
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