2SD814A(2002) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD814A Datasheet PDF : 3 Pages
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Transistor
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
0.40+–00..0150
3
s Features
• High collector to emitter voltage VCEO
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
185
V
VCEO
185
V
VEBO
5
V
ICP
100
mA
IC
50
mA
PC
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking symbo：l L
Unit: mm
0.16+–00..0160
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
s Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
ICBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
NV
VCB = 100 V, IE = 0
1
µA
IC = 100 µA, IB = 0
185
V
IE = 10 µA, IC = 0
5
V
VCE = 5 V, IC = 10 mA
90
330
IC = 30 mA, IB = 3 mA
1
V
VCB = 10 V, IE = −10 mA, f = 200 MHz
150
MHz
VCB = 10 V, IE = 0, f = 1 MHz
2.3
pF
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 kΩ, Function = FLAT
Note) *: hFE Rank classification
ランク
Q
R
S
hFE
Marking symbol
90 to 155
LQ
130 to 220
LR
185 to 330
LS
Publication date: April 2002
Note) The part number in the parenthesis shows conventional part number.
SJC00196BED
1
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