2SD814 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD814 Datasheet PDF : 3 Pages
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Transistor
2SD0814, 2SD0814A (2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
I Features
G High collector to emitter voltage VCEO.
G Low noise voltage NV.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD0814
150
VCBO
V
base voltage 2SD0814A
185
Collector to 2SD0814
150
VCEO
V
emitter voltage 2SD0814A
185
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : P(2SD0814)
L(2SD0814A)
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
ICBO
VCB = 100V, IE = 0
1
µA
Collector to emitter 2SD0814
150
VCEO
IC = 100µA, IB = 0
V
voltage
2SD0814A
185
Emitter to base voltage
Forward current transfer ratio
VEBO
hFE*
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
5
V
90
330
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1
V
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
150
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2.3
pF
Noise voltage
VCE = 10V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150
mV
*hFE Rank classification
Rank
hFE
Marking
Symbol
2SD0814
2SD0814A
Q
90 ~ 155
PQ
LQ
R
130 ~ 220
PR
LR
S
185 ~ 330
PS
LS
Note.) The Part numbers in the Parenthesis show
conventional part number.
1
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