2SD1638 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SD1638 Datasheet PDF : 3 Pages
| |||
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=1mA
VBEsat Base-emitter saturation voltage
IC=1.0A ;IB=1mA
ICEO
Collector cut-off current
VCE=100V; IB=0
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=2V
COB
Collector output capacitance
f=0.1MHz ; VCB=10V
www.jmnic.com
2SD1638
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
0.5
mA
10
μA
3
mA
1000
10000
25
pF
JMnic
Share Link: 