2SD1664 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD1664 Datasheet PDF : 4 Pages
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2SD1664
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
1
A
Collector Current (Duty=1/2, PW=20ms)
Pulse
IC
2
A
Collector Power Dissipation
PC
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
fT
Cob
TEST CONDITIONS
IC= 50μA
IC= 1mA
IE=50μA
VCB=20V
VEB= 4V
VCE= 3V, Ic= 100mA
IC/IB=500mA /50mA
VCE=5V, IE=-50mA, f=100MHz
VCB= 10V, IE= 0A, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
MIN TYP MAX UNIT
40
V
32
V
5
V
0.5 μA
0.5 μA
82
390
0.15 0.4
V
150
MHz
15
pF
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-025.C
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