2SD1691 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SD1691

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING

Renesas Electronics 

DATA SHEET

SILICON POWER TRANSISTOR

2SD1691

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING

FEATURES

• Large current capacity and low VCE(sat):

IC(DC) = 5.0 A, IC(pulse) = 8.0 A

VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)

• Large power dissipation TO-126 type power transistor

PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C)

• Complementary transistor: 2SB1151

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

5.0

A

Collector current (pulse)

IC(pulse)*

8.0

A

Base current (DC)

IB(DC)

1.0

A

Total power dissipation

PT (Ta = 25°C)

1.3

W

Total power dissipation

PT (Tc = 25°C)

20

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Conditions

Collector cutoff current

Emitter cutoff current

DC current gain

DC current gain

DC current gain

Collector saturation voltage

Base saturation voltage

Turn-on time

Storage time

Fall time

ICBO

IEBO

hFE1**

hFE2**

hFE3**

VCE(sat)**

VBE(sat)**

ton

tstg

tf

VCB = 50 V, IE = 0

VEB = 7.0 V, IC = 0

VCE = 1.0 V, IC = 0.1 A

VCE = 1.0 V, IC = 2.0 A

VCE = 1.0 V, IC = 5.0 A

IC = 2.0 A, IB = 0.2 A

IC = 2.0 A, IB = 0.2 A

IC = 2.0 A, IB1 = −IB2 = 0.2 A

RL = 5.0 Ω, VCC ≅ 10 V

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE2

M

100 to 200

L

160 to 320

K

200 to 400

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

MIN.

TYP.

MAX.

Unit

10

µA

10

µA

60

100

400

50

0.1

0.3

V

0.9

1.2

V

0.2

1.0

µs

1.1

2.5

µs

0.2

1.0

µs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16190EJ1V1DS00 (1st edition)

Date Published December 2004 NS CP(K)

Printed in Japan

2002

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