2SD350A View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SD350A

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD350A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2A

VBEsat

Base-emitter saturation voltage

IC=4.5 A;IB=2A

ICBO

Collector cut-off current

VCB=800V;IE=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=10V

MIN TYP. MAX UNIT

700

V

5

V

1.0

V

1.3

V

10

µA

8

3

2

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