2SD560 View Datasheet(PDF) - Tiger Electronic
Part Name
Description
Manufacturer
2SD560 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
NPN Silicon Power Ttransistors
Product specification
2SD560
DESCRIPTION
The 2SD560 is a mold power transistor developed for lowfrequency
power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l
Value Unit
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
100 V
7.0 V
5.0 A
0.5 A
30 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICBO VCB=100V, IE=0
Emitter Cut-off Current
IEBO VEB=7.0V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Saturation Voltage
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
IC=30mA, IB=0
VCE=2.0V, IC=3.0A
VCE=2.0V, IC=5.0A
IC=3.0A,IB=3.0mA
IC=3.0A,IB=3.0mA
Current Gain Bandwidth Product
fT
VCE=10V,IC=500mA
Min.
—
—
100
2000
500
—
—
4.0
Typ. Max. Unit
— 1.0 uA
—
10 uA
—
—
V
— 15000
—
—
— 1.5 V
— 2.0 V
—
— MHz
hFE Classification
classification
hFE1
R
2000~5000
O
3000~7000
Y
5000~15000
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