2SD803 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD803

Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

2SD803

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 2000 (Min) @ IC =1 Adc

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 100V(Min)

·Wide Area of Safe Operation

APPLICATIONS

·Designed for high power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

120

V

VCEO Collector-Emitter Voltage

100

V

VEBO Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

8

A

IBB

Base Current -Continuous

1

A

PC

Collector Power Dissipation@TC=25℃ 100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

isc Website：www.iscsemi.cn

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