Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −0.5 A
VGS = −10 V, ID = −0.5 A
VDS = −10 V, ID = −0.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
VDD ≈ −48 V, VGS = −10 V,
Gate−source charge
Qgs
ID = −1 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −1 A, VGS = 0 V
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs
Marking
2SJ507
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−60 —
—
V
−0.8 —
−2.0
V
— 0.72 1.0
Ω
—
0.5 0.7
0.5 1.0
—
S
— 170 —
—
25
—
pF
—
72
—
—
20
—
—
35
—
ns
—
30
—
— 135 —
—
5.6
—
—
3.9
—
nC
—
1.7
—
Min Typ. Max Unit
—
—
−1
A
—
—
−3
A
—
—
1.5
V
—
58
—
ns
— 72.5 —
nC
J507
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16