2SK3531-01 View Datasheet(PDF) - Fuji Electric

Part Name

Description

Manufacturer

2SK3531-01

N-CHANNEL SILICON POWER MOSFET

Fuji Electric 

2SK3531-01

Characteristics

Allowable Power Dissipation

PD=f(Tc)

250

200

150

100

50

0

0

25

50

75

100

125

150

Tc [°C]

FUJI POWER MOSFET

Typical Output Characteristics

ID=f(VDS):80 µs pulse test,Tch=25°C

8

20V

10V

8.0V

7.0V

6.5V

6

6.0V

4

2

VGS=5.5V

0

0

5

10

15

20

VDS [V]

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

10

10

1

1

0.1

0 1 2 3 4 5 6 7 8 9 10

VGS[V]

0.1

1

10

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25°C

2.6

VGS=5.5V

6.0V

6.5V

7.0V

8.0V

2.5

10V

20V

2.4

2.3

2.2

2.1

2.0

1.9

1.8

0

2

4

6

8

10

ID [A]

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=3A,VGS=10V

7

6

5

4

max.

3

typ.

2

1

0

-50 -25 0

25 50 75 100 125 150

Tch [°C]

2

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