2SK3532 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3532 Datasheet PDF : 4 Pages
| |||
2SK3532-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
Ciss
100
10-1
Coss
10-2
Crss
10-3
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
103
Ω
tf
102
td(off)
td(on)
101
tr
100
10-1
100
101
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25°C
14
12
Vcc= 180V
450V
10
720V
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
800
I =2A
AS
600
400 IAS=4A
I =6A
AS
200
0
0
25
50
75
100
125
150
starting Tch [°C]
3
Share Link: 