2SK3535-01 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3535-01 Datasheet PDF : 4 Pages
| |||
2SK3535-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
4 (Drain pad area : 500mm2)
3
2
1
0
0
25
50
75
100
125
150
Tc [ °C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
100
20V
80
10V
8V
7.5V
60
7.0V
40
6.5V
20
6.0V
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
VGS=
0.20 5.5V 6.0V
0.15
0.10
6.5V 7.0V
7.5V
8V
10V
20V
0.05
0.00
0
20
40
60
80
100
ID [A]
2
Share Link: 